摘要：近年来，随着科学技术的高速发展，人类进入了信息时代，随着急剧增多的信息包围了人类的生活，人们对信息和数据的存储和处理益发关注。而铁磁性半导体作为自旋电子学的新兴材料，因为能够把信息处理和数据储存统一于一个材料中，所以具有重大的研究价值和广泛的应用前景。
本文简要介绍了铁磁磁性双隧道结的概况，使用量子力学的散射方法对铁磁半导体GaMnAs /AlAs/GaMnAs/ GaAs 的相干隧穿进行研究，给出了解析推导的结果。
关键词：磁性双隧道结；铁磁性半导体；自旋极化；隧穿磁致电阻
Abstract：In recent years, with the rapid development of science and technology, man has gone into the information age, and with the dramatic increase of information surrounding the human life, the information processing and data storage have received considerable attention. However, ferromagnetic semiconductor as a new emerging material of spintronics, which can combine the information processing and data storage in one material, has significant research value and broad applicable prospect.
This paper briefly introduces the ferromagnetic double tunnel junction, uses the scattering method of quantum mechanics to study the ferromagnetic semiconductor GaMnAs /AlAs / GaMnAs/ GaAs coherent tunneling junction and present the analytical results.
Keywords: Magnetic double tunnel junction; Ferromagnetic semiconductor; Spin polarization;Tunneling magnetoresistance
