摘 要：ZnO 是一种宽带隙半导体材料，室温下禁带宽度为3.37 eV，激子束缚能高达 60 meV，这使得 ZnO 具有高效源于激子的紫外发射，并使得 ZnO 在短波长激光二极管、紫外探测器等方面有着广泛的应用前景。近年来，纳米粒子因其独特的光物理性质和化学性质成为科学领域研究的热点。
到目前为止，人们已经采用激光脉冲沉积，磁控溅射，金属有机气相沉积等技术来制备 ZnO。和这些方法相比，溶胶—凝胶法具有更多的优点。我们通过溶胶—凝胶法制备了不同组分的Zn1-xMgxO (0.56≤x≤0.91)合金薄膜，并在不同温度下进行了退火。通过XRD的图谱分析我们发现了当 MgO 的含量超过 0.71 时，Zn1-xMgxO的结构类似于 MgO ；而对ZnMgO合金进行退火的退火温度则不宜过高。
Abstract：Zinc oxide (ZnO) is a wide band gap (3.37 eV) semiconductor oxide and has a large exciton binding energy (60 meV), which allows its high efficient ultraviolet (UV) emission from the exciton and wide application to short-wavelength laser diodes and UV detectors. Recently，the nanoparticles have been become a focus in Scientific research field，because of unique Physical and Chemical property.
Until now, ZnO has been grown with various methods such as pulsed laser deposition (PLD), radio frequency magnetron sputtering (RFM) and metalorganic vaporphase deposition (MOCVD). Comparing with other methods, sol-gel technique is known to have more distinct merits. Zn1-xMgxO (0.56≤x≤0.91) thin films with different Mg content were fabricated by the sol-gel method．The samples were rapidly annealed at different temperatures. The results of XRD for the samples annealed at different temperature indicated that when the samples with MgO content over 0.71,the structure of Zn1-xMgxO is very similar to the MgO .And we have come to the conclusion that the annealing temperature of ZnMgO alloy should not be too high．
Key words： Sol-gel；ZnMgO alloy； X—ray diffraction(XRD)