摘要：ZnO是一种新型的II一Ⅵ族直接宽带隙化合物半导体材料。室温下禁带宽度为3．37eV，激子束缚能为60meV，具备了室温下发射紫外光的必要条件，在紫外探测器、LED、LD等领域有着巨大的发展潜力；ZnO薄膜以其优良的压电性能、透明导电性能等使其在太阳能电池、压电器件、表面声波器件、气敏元件等诸多领域得到广泛应用。
本文采用溶胶一凝胶(sol-gel)工艺在普通玻璃基片上成功地制备出纯ZnO薄膜和A1掺杂的ZnO薄膜（AZO薄膜），同时用磁控溅射法制备了AZO薄膜以及AZO/Ag/AZO薄膜。所用的溶胶是以乙二醇甲醚为溶剂，醋酸锌为前驱体，乙醇胺为稳定剂反应制得，用旋转涂膜法在基体上镀膜，经烘烤、预烧、退火，最后形成均匀、透明的多晶薄膜。利用XRD、UVS光谱仪等分析方法对薄膜进行了研究，结果显示，用溶胶-凝胶法制备的薄膜为六方纤锌矿型结构，具有高C轴择优取向性；表面均匀、致密，薄膜材料由许多星状晶粒组成，薄膜在可见光透过率平均可达85％；对薄膜厚度以及电学性能进行了测定后发现：薄膜厚度平均为100nm，掺杂1%Al的AZO薄膜在550℃退火温度下得到了最小电阻率，为4Ω.cm。
用磁控溅射法制备的AZO薄膜以及AZO/Ag/AZO薄膜均具有C轴择优取向，其中AZO薄膜在可见光范围内的透过率平均可达90%，而AZO/Ag/AZO三明治结构的薄膜的透过率远低于80%，AZO薄膜表面电阻在2.0X104～3.0X104Ω，AZO/Ag/AZO薄膜表面电阻在20～50Ω。
关键词：溶胶-凝胶法；Al掺杂；磁控溅射法、AZO/Ag/AZO
Abstract:Zn0 film is a novel Ⅱ一Ⅵdirect compound semiconductor with wide band gap energy of 3.37eV and a exciton binding energe 60meV at room temperature. Due to its the prerequisite for visible or ultraviolet light emission at room temperanlre, it has the tremendous potential applications for ultraviolet detectors, LEDs, LDs. ZnO thin fnm is used widely and efrectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance.
In this paper, the pure Zn0 and Al-doped ZnO thin films(AZO) were prepared on ordinary glass substrate ( micmscope slides) by sol-gel process, and AZO films and AZO/Ag/AZO films were prepared by Magnetron sputtering. Using 2-methoxyethanol as solution, Zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction, these sols were prepared. Homogenous, transparent, polycrystalline thin films were formed by spin-coating method for film-plate on substrate, drying, pre-heat-treatment, and last anealing. By the measurements of XRD and UVS, the properties of these thin films were analysed. The results proved that the thin film by sol-gel meature with strongly preferred orientation of C-axis perpendicular, the surface was homogenous，dense and crackfree was the crystalline phase of hexagonal wurtizite．The average transmittance of thin film in visible region was 85%. The average thickness of the film was 100nm. Doping with 1% Al and annealing at 550 ° C, the minimum resistivity of these AZO thin films were gained, which was 4Ω.cm.
Prepared by Magnetron sputtering the AZO thin film and the AZO/Ag/AZO thin film all have C-axis perpendicular.The average transmittance of the AZO thin film in visible region was 90%, and the transmittance of the AZO/Ag/AZO thin film was lower 80%. the resistance of the AZO thin film was at 2.0X104～3.0X104Ω, the resistance of the AZO/Ag/AZO thin film was at 20～50Ω.
Key words: sol-gel process; Al doping; Magnetron sputtering; AZO/Ag/AZO.
